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High Power Pulsed
- 1550nm Pulsed Laser Diode with Integrated Micro Lens
- 905nm Pulsed Laser Diodes w/ Integrated Micro Lens
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- 905 nm High Power Pulsed Laser Diodes
- SCW 1532-500R
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- 1550 nm High Brightness Pulsed Laser Diodes
- High Power Monolithic Stack Pulsed Laser Diodes
- SCW 1536-200R
- SCW Series: High Power Instrument Laser Modules Pulsed Applications
- Hybrid Laser Diodes for Pulsed Operations
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Press Releases
May 15, 2014
30um InGaAs Avalanche Photodiode - The LAPD 1550-30R
As seen in Novuslight’s May 2014 issue.
OSI Laser Diode Inc introduces the latest detector in the avalanche photodiode (APD) family, the LAPD 1550-30R.
The low-noise, high sensitivity, 30um indium gallium arsenide (InGaAs) mesa structure joins the company’s 75 and 200 um APD series. The high speed LAPD 1550-30R operates at 3.5 GHz and features a broad voltage breakdown curve of 30 V(minimum) to 40 V(maximum) with a typical response of 37 volts.
Designed for applications in range-finding, optical time-domain reflectometers (OTDRs), and high-sensitivity line receivers, the LAPD 1550-30R is housed in a hermetically sealed 3-pin TO46 package with a lens cap. OSI Laser Diode’s low noise, 30 micron InGaAs APD module is ROHS compliant and operates from 1260 nm to 1650 nm with a typical operational wavelength at 1550 nm. The operating temperature ranges from -40 degrees to 85 degrees C, with a non-operating, storage temperature range from -40 degrees to 100 degrees C.