Press Releases

February 16, 2017

OSI Laser Diode Introduces InGaAs Avalanche Photodiode

OSI Laser Diode Introduces InGaAs Avalanche Photodiode

New LAPD 3050 avalanche photodiode module is ideal for light level detection and signal-transmission applications.

EDISON, N.J. - Feb. 15, 2017 - PRLog—OSI Laser Diode, Inc. (LDI), an OSI Systems Company, introduces the LAPD 3050, an indium gallium arsenide (InGaAs) avalanche photodiode (APD) module that is designed for light level detection and/or signal transmission applications.  The new 50 µm active area device features low dark current, low back reflection, and high speed (2.5 Ghz) in a miniature package.  With spectral response from 1000 nm to 1650 nm at 25 degrees C, the typical operational wavelength is 1550 nm.

The APD is housed in a hermetically sealed 3-pin coaxial package and coupled to a single-mode fiber pigtail. The overload-tolerant LAPD 3050 device is ideal for use in optical time-domain reflectometers (OTDRs), line receivers, and long haul applications. The breakdown voltage is from 50 V (min.) to 70 V (max.) and operating and storage temperatures range from -40 degrees C to +85 degrees C.

April 19, 2016

OSI LDI Announces 905nm Pulsed Laser Diode w/ Integrated Micro Lens

OSI LDI Announces 905nm Pulsed Laser Diode w/ Integrated Micro Lens

***New CVN 63-90ECL is hermetically sealed for field-deployed range finders apps.

Edison, NJ- April 19, 2016 - OSI Laser Diode, Inc (LDI)
, an OSI Systems company, introduces the CVN 63-90ECL, a 905nm pulsed laser diode with an integrated micro lens. The device offers a far-field beam pattern with equivalent divergence values (8 x 8 degrees FWHM) for both the Fast (perpendicular) and the Slow (parallel) axes of emission. The adjusted far-field pattern offers higher coupling efficiency into standard spherical lens systems, making the diode ideal for critical defense applications.

Hermetically sealed in a robust 9mm package for survivability in harsh environmental conditions, the pulsed laser diode is well suited for demanding military tasks such as field-deployed range finders. the RoHS-compliant devices operates from 895nm (min.) to 915nm (max.), with typical wavelength operation at 905nm. Peak power is 75W (min.) pulse width is 100 nanoseconds(typ) and the drive current is typically 30 A. Storage temperatures range from -40 degrees C to +85 degrees C; the typical operating temperature is 25 degrees C.

OSI Laser Diode’s new CVN 63-90ECL joins the previously announced CVLL 350-CL90 pulsed laser diode with intergrated micro lens that operates at 1550nm. To learn more about these and other advanced optoelectronic products, please visit: www.laserdiode.com

June 18, 2015

OSI Laser Diode Introduces 1490 nm High Power Pulsed Laser Diode Module

OSI Laser Diode Introduces 1490 nm High Power Pulsed Laser Diode Module

New SCW 1430 series laser diode module will be showcased at Laser World of
Photonics in Munich, Germany, June 22-25, 2015, Hall A2 Booth 102.
June 17, 2015 – Edison, NJ - OSI Laser Diode, Inc. (LDI), an OSI Systems
Company, will premiere the innovative SCW 1430 laser diode module series at
Laser World of Photonics, Munich, Germany, June 22-25, 2015 in the OSI
Optoelectronics booth, Hall A2, #102. The new 1490 nm Al RWG F/P laser
diode series is specifically designed for optical test applications such as optical
time-domain reflectometers (OTDRs) and optical spectrum analyzers (OSAs).

LDI’s new SCW 1430 product series features excellent pulse drift performance
and high stability. The modules come in four convenient packages to choose from:
14-pin DIL; 14-pin butterfly; 3-pin coaxial; or 3-pin TO56 housings. RoHS compliant,
the high-peak pulsed laser diode modules operate typically at a center wavelength of
1490 nm (1470 nm, min. to 1510 nm, max.). They deliver no less than 100 mW optical power
(fiber) and a minimum of 300 mW (TO56).

Easy to integrate into new or existing systems, LDI’s new products are
intended for optical testing applications where high-peak pulsed optical power is
required. The higher power offers greater dynamic range capability to OTDR
manufacturers.

If you’re planning to attend Laser Munich next week, please stop by Hall A2,
Booth 102 to learn more. Or for more information, visit www.laserdiode.com/.

OSI Laser Diode, Inc. (LDI - www.laserdiode.com), founded in 1967, is a global
leader in laser diode technology, providing advanced optoelectronic products that
serve the military/aerospace, telecom/datacom (short and long haul),
commercial, industrial, and medical markets.